SVG085R9NT Datasheet. Specs and Replacement

Type Designator: SVG085R9NT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 109 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 458 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO220

SVG085R9NT substitution

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SVG085R9NT datasheet

 ..1. Size:481K  silan
 svg085r9nt.pdf pdf_icon

SVG085R9NT

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 9.1. Size:330K  silan
 svg087r0nt.pdf pdf_icon

SVG085R9NT

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 9.2. Size:420K  silan
 svg083r6nal5.pdf pdf_icon

SVG085R9NT

SVG083R6NAL5 138A 80V N S D 1 SVG083R6NAL5 N MOS 8 LVMOS S D 2 7 D S 3 6 ... See More ⇒

 9.3. Size:434K  silan
 svg086r0nt svg086r0ns svg086r0nstr svg086r0ndtr svg086r0nl5tr.pdf pdf_icon

SVG085R9NT

SVG086R0NT(S)(D)(L5) 120A 80V N 2 S D 1 8 SVG086R0NT(S)(D)(L5) N MOS S 2 7 D 1 LVMOS D S 3 6 G 4 5 D 3 ... See More ⇒

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Detailed specifications: SVG076R5NS, SVG076R5NSTR, SVG076R5NT, SVG083R4NP7, SVG083R4NS, SVG083R4NSTR, SVG083R4NT, SVG083R6NAL5, SI2302, SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT, SVG094R1NKL

Keywords - SVG085R9NT MOSFET specs

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