SVG086R0NSTR Datasheet. Specs and Replacement

Type Designator: SVG086R0NSTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

SVG086R0NSTR substitution

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SVG086R0NSTR datasheet

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SVG086R0NSTR

SVG086R0NT(S)(D)(L5) 120A 80V N 2 S D 1 8 SVG086R0NT(S)(D)(L5) N MOS S 2 7 D 1 LVMOS D S 3 6 G 4 5 D 3 ... See More ⇒

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SVG086R0NSTR

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SVG086R0NSTR

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SVG086R0NSTR

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Detailed specifications: SVG083R4NS, SVG083R4NSTR, SVG083R4NT, SVG083R6NAL5, SVG085R9NT, SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, IRF520, SVG086R0NT, SVG086R5NT, SVG087R0NT, SVG094R1NKL, SVG094R1NS, SVG094R1NSTR, SVG094R1NT, SVG096R5NS

Keywords - SVG086R0NSTR MOSFET specs

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