SVG094R1NT Datasheet. Specs and Replacement
Type Designator: SVG094R1NT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 866 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: TO220
SVG094R1NT substitution
- MOSFET ⓘ Cross-Reference Search
SVG094R1NT datasheet
Detailed specifications: SVG086R0NS, SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT, SVG094R1NKL, SVG094R1NS, SVG094R1NSTR, 75N75, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT, SVG10120NSA, SVG103R0NKL, SVG103R0NP7
Keywords - SVG094R1NT MOSFET specs
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