SVG096R5NS Datasheet. Specs and Replacement

Type Designator: SVG096R5NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO263

SVG096R5NS substitution

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SVG096R5NS datasheet

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SVG096R5NS

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SVG096R5NS

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Detailed specifications: SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT, SVG094R1NKL, SVG094R1NS, SVG094R1NSTR, SVG094R1NT, AO3400A, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT, SVG10120NSA, SVG103R0NKL, SVG103R0NP7, SVG103R0NS

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility