All MOSFET. SVG10120NAT Datasheet

 

SVG10120NAT Datasheet and Replacement


   Type Designator: SVG10120NAT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 152 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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SVG10120NAT Datasheet (PDF)

 ..1. Size:395K  silan
 svg10120nat svg10120nadtr.pdf pdf_icon

SVG10120NAT

SVG10120NAT(D) 80A100V N 2SVG10120NAT(D) N MOS LVMOS 1 3

 5.1. Size:312K  silan
 svg10120nsa.pdf pdf_icon

SVG10120NAT

SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4

 9.1. Size:276K  1
 svg104r5nt svg104r5ns.pdf pdf_icon

SVG10120NAT

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

 9.2. Size:317K  silan
 svg108r5nad.pdf pdf_icon

SVG10120NAT

SVG108R5NAD 94A100V N 2SVG108R5NAD N MOS LVMOS 1

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Datasheet: SVG094R1NKL , SVG094R1NS , SVG094R1NSTR , SVG094R1NT , SVG096R5NS , SVG096R5NKL , SVG096R5NT , SVG10120NADTR , MMIS60R580P , SVG10120NSA , SVG103R0NKL , SVG103R0NP7 , SVG103R0NS , SVG103R0NS6TR , SVG103R0NSTR , SVG103R0NT , SVG103R9NS .

History: STP6625 | SVF840MJ

Keywords - SVG10120NAT MOSFET datasheet

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 SVG10120NAT equivalent finder
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