SVG10120NAT MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG10120NAT
Marking Code: 10120NAT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 152 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 328 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
SVG10120NAT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG10120NAT Datasheet (PDF)
svg10120nat svg10120nadtr.pdf
SVG10120NAT(D) 80A100V N 2SVG10120NAT(D) N MOS LVMOS 1 3
svg10120nsa.pdf
SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf
SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3
svg104r0nt svg104r0ns svg104r0nstr.pdf
SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3
svg108r5namq svg108r5namj.pdf
SVG108R5NAMQ(MJ) 94A100V N 2SVG108R5NAMQ(MJ) N MOS LVMOS 1
svg105r4nt svg105r4ns svg105r4nstr svg105r4nkl.pdf
SVG105R4NT(S)(KL) 120A100V N 2SVG105R4NT(S)(KL) N MOS LVMOS 1
svg108r5nam svg108r5nat.pdf
SVG108R5NAM(T) 94A100V N 2SVG108R5NAM(T) N MOS LVMOS 1
svg103r0nt svg103r0ns svg103r0nstr svg103r0nkl svg103r0ns6tr svg103r0np7.pdf
SVG103R0NT(S)(KL)(S6)(P7) 180A100V N 42SVG103R0NT(S)(KL)(S6)(P7) N MOS 1 1 LVMOS 3 2,3,5,6,71. 2.
svg108r5nal5.pdf
SVG108R5NAL5 80A100V N S D1SVG108R5NAL5 N MOS 8 LVMOS S D2 7 DS 3 6
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918