SVG10120NAT Datasheet. Specs and Replacement
Type Designator: SVG10120NAT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 152 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 328 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
SVG10120NAT substitution
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SVG10120NAT datasheet
svg10120nat svg10120nadtr.pdf
SVG10120NAT(D) 80A 100V N 2 SVG10120NAT(D) N MOS LVMOS 1 3 ... See More ⇒
svg10120nsa.pdf
SVG10120NSA 16A 100V N 5 6 7 8 4. SVG10120NSA N MOS 1 2 3. 5 6 7 8. LVMOS 4 ... See More ⇒
svg104r5nt svg104r5ns.pdf
Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒
Detailed specifications: SVG094R1NKL, SVG094R1NS, SVG094R1NSTR, SVG094R1NT, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, 7N60, SVG10120NSA, SVG103R0NKL, SVG103R0NP7, SVG103R0NS, SVG103R0NS6TR, SVG103R0NSTR, SVG103R0NT, SVG103R9NS
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