All MOSFET. SVG103R9NS Datasheet

 

SVG103R9NS Datasheet and Replacement


   Type Designator: SVG103R9NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 189 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 752 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO263
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SVG103R9NS Datasheet (PDF)

 ..1. Size:404K  silan
 svg103r9ns.pdf pdf_icon

SVG103R9NS

SVG103R9NS 120A100V N 2SVG103R9NS N MOS LVMOS 1 3

 7.1. Size:407K  silan
 svg103r0nt svg103r0ns svg103r0nstr svg103r0nkl svg103r0ns6tr svg103r0np7.pdf pdf_icon

SVG103R9NS

SVG103R0NT(S)(KL)(S6)(P7) 180A100V N 42SVG103R0NT(S)(KL)(S6)(P7) N MOS 1 1 LVMOS 3 2,3,5,6,71. 2.

 9.1. Size:276K  1
 svg104r5nt svg104r5ns.pdf pdf_icon

SVG103R9NS

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

 9.2. Size:312K  silan
 svg10120nsa.pdf pdf_icon

SVG103R9NS

SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4

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History: FQD4N25TM | 2SK3192

Keywords - SVG103R9NS MOSFET datasheet

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