SVG104R0NT MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG104R0NT
Marking Code: 104RONT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 107 nC
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 896 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO220
SVG104R0NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG104R0NT Datasheet (PDF)
svg104r0nt svg104r0ns svg104r0nstr.pdf
SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf
SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
