All MOSFET. SVG104R5NSTR Datasheet

 

SVG104R5NSTR Datasheet and Replacement


   Type Designator: SVG104R5NSTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 864 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
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SVG104R5NSTR Datasheet (PDF)

 ..1. Size:413K  silan
 svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf pdf_icon

SVG104R5NSTR

SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3

 4.1. Size:276K  1
 svg104r5nt svg104r5ns.pdf pdf_icon

SVG104R5NSTR

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

 7.1. Size:385K  silan
 svg104r0nt svg104r0ns svg104r0nstr.pdf pdf_icon

SVG104R5NSTR

SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3

 7.2. Size:422K  silan
 svg104r2nt.pdf pdf_icon

SVG104R5NSTR

SVG104R2NT 120A100V N 2SVG104R2NT N MOS LVMOS 1

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Keywords - SVG104R5NSTR MOSFET datasheet

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