All MOSFET. SVG105R4NT Datasheet

 

SVG105R4NT Datasheet and Replacement


   Type Designator: SVG105R4NT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 652 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO220
 

 SVG105R4NT substitution

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SVG105R4NT Datasheet (PDF)

 ..1. Size:401K  silan
 svg105r4nt svg105r4ns svg105r4nstr svg105r4nkl.pdf pdf_icon

SVG105R4NT

SVG105R4NT(S)(KL) 120A100V N 2SVG105R4NT(S)(KL) N MOS LVMOS 1

 7.1. Size:320K  silan
 svg105r5nt.pdf pdf_icon

SVG105R4NT

SVG105R5NT 120A98V N 2SVG105R5NT N MOS LVMOS 1

 9.1. Size:276K  1
 svg104r5nt svg104r5ns.pdf pdf_icon

SVG105R4NT

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

 9.2. Size:312K  silan
 svg10120nsa.pdf pdf_icon

SVG105R4NT

SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4

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Datasheet: SVG104R5NF , SVG104R5NKL , SVG104R5NS6 , SVG104R5NS6TR , SVG104R5NSTR , SVG105R4NKL , SVG105R4NS , SVG105R4NSTR , IRF840 , SVG105R5NT , SVG108R5NAD , SVG108R5NAL5 , SVG108R5NAM , SVG108R5NAMJ , SVG108R5NAMQ , SVG108R5NAT , SVG15670ND .

History: AP18P10AGH-HF | TPD60R1K5MFD

Keywords - SVG105R4NT MOSFET datasheet

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