All MOSFET. SVG108R5NAMJ Datasheet

 

SVG108R5NAMJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVG108R5NAMJ
   Marking Code: 108R5NAMJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 408 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO251

 SVG108R5NAMJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVG108R5NAMJ Datasheet (PDF)

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 svg108r5namq svg108r5namj.pdf

SVG108R5NAMJ SVG108R5NAMJ

SVG108R5NAMQ(MJ) 94A100V N 2SVG108R5NAMQ(MJ) N MOS LVMOS 1

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SVG108R5NAMJ SVG108R5NAMJ

SVG108R5NAM(T) 94A100V N 2SVG108R5NAM(T) N MOS LVMOS 1

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 svg108r5nad.pdf

SVG108R5NAMJ SVG108R5NAMJ

SVG108R5NAD 94A100V N 2SVG108R5NAD N MOS LVMOS 1

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 svg108r5nal5.pdf

SVG108R5NAMJ SVG108R5NAMJ

SVG108R5NAL5 80A100V N S D1SVG108R5NAL5 N MOS 8 LVMOS S D2 7 DS 3 6

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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