SVG108R5NAMQ Datasheet. Specs and Replacement
Type Designator: SVG108R5NAMQ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 87 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 94 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 408 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO251
SVG108R5NAMQ substitution
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SVG108R5NAMQ datasheet
svg108r5nal5.pdf
SVG108R5NAL5 80A 100V N S D 1 SVG108R5NAL5 N MOS 8 LVMOS S D 2 7 D S 3 6 ... See More ⇒
Detailed specifications: SVG105R4NS, SVG105R4NSTR, SVG105R4NT, SVG105R5NT, SVG108R5NAD, SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ, IRFZ44, SVG108R5NAT, SVG15670ND, SVG15670NL5, SVG15670NSA, SVGP02R58NL5, SVGP03100NCS, SVGP066R1NL5, SVGP069R5NSA
Keywords - SVG108R5NAMQ MOSFET specs
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