SVGP02R58NL5 Datasheet. Specs and Replacement
Type Designator: SVGP02R58NL5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 294 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 2935 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00058 Ohm
Package: PDFN8-5X6
SVGP02R58NL5 substitution
- MOSFET ⓘ Cross-Reference Search
SVGP02R58NL5 datasheet
svgp02r58nl5.pdf
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Detailed specifications: SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ, SVG108R5NAMQ, SVG108R5NAT, SVG15670ND, SVG15670NL5, SVG15670NSA, IRF640N, SVGP03100NCS, SVGP066R1NL5, SVGP069R5NSA, SVGP082R6NL5A, SVGP103R0NP7, SVGP103R0NT, SVGP104R1NL5, SVGP104R5NAS
Keywords - SVGP02R58NL5 MOSFET specs
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