SVGP02R58NL5 Datasheet. Specs and Replacement

Type Designator: SVGP02R58NL5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 294 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 2935 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00058 Ohm

Package: PDFN8-5X6

SVGP02R58NL5 substitution

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SVGP02R58NL5 datasheet

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SVGP02R58NL5

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SVGP02R58NL5

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SVGP02R58NL5

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Detailed specifications: SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ, SVG108R5NAMQ, SVG108R5NAT, SVG15670ND, SVG15670NL5, SVG15670NSA, IRF640N, SVGP03100NCS, SVGP066R1NL5, SVGP069R5NSA, SVGP082R6NL5A, SVGP103R0NP7, SVGP103R0NT, SVGP104R1NL5, SVGP104R5NAS

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