SVGP02R58NL5 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGP02R58NL5
Marking Code: P02R58N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 294 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 134 nC
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 2935 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00058 Ohm
Package: PDFN8-5X6
SVGP02R58NL5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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