SVGP03100NCS MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGP03100NCS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 829 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: WLCSP22-2X2
SVGP03100NCS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGP03100NCS Datasheet (PDF)
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