SVGP103R0NT MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGP103R0NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 1188 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
SVGP103R0NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGP103R0NT Datasheet (PDF)
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