SVGP104R5NSTR Datasheet. Specs and Replacement
Type Designator: SVGP104R5NSTR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 864 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO263
SVGP104R5NSTR substitution
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SVGP104R5NSTR datasheet
svgp103r0nt svgp103r0np7.pdf
SVGP103R0NT(P7) 180A 100V N SVGP103R0NT(P7) N MOS 2 LVMOS 1 ... See More ⇒
Detailed specifications: SVGP082R6NL5A, SVGP103R0NP7, SVGP103R0NT, SVGP104R1NL5, SVGP104R5NAS, SVGP104R5NASTR, SVGP104R5NAT, SVGP104R5NS, IRFP250N, SVGP104R5NT, SVGP107R0NL5, SVGP15110NL5, SVGP15140NL5A, SVGP15161PL3A, SVGP15751PL3, SVGP157R2NS, SVGP157R5NP7
Keywords - SVGP104R5NSTR MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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