SVGP157R2NS Datasheet and Replacement
Type Designator: SVGP157R2NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 689 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO263
SVGP157R2NS substitution
SVGP157R2NS Datasheet (PDF)
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Datasheet: SVGP104R5NS , SVGP104R5NSTR , SVGP104R5NT , SVGP107R0NL5 , SVGP15110NL5 , SVGP15140NL5A , SVGP15161PL3A , SVGP15751PL3 , IRF1010E , SVGP157R5NP7 , SVGP157R5NT , SVGP159R3NL5ATR , SVGP159R3NL5TR , SVGP20110NP7 , SVGP20110NS , SVGP20110NSTR , SVGP20110NT .
History: FQB34P10TM | 75N75G-TF1-T | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
Keywords - SVGP157R2NS MOSFET datasheet
SVGP157R2NS cross reference
SVGP157R2NS equivalent finder
SVGP157R2NS lookup
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SVGP157R2NS replacement
History: FQB34P10TM | 75N75G-TF1-T | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
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