SVGP157R2NS Datasheet. Specs and Replacement

Type Designator: SVGP157R2NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 689 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO263

SVGP157R2NS substitution

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SVGP157R2NS datasheet

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svgp157r2ns.pdf pdf_icon

SVGP157R2NS

SVGP157R2NS 100A 150V N 2 SVGP157R2NS N MOS LVMOS 1 3 ... See More ⇒

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SVGP157R2NS

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svgp15751pl3.pdf pdf_icon

SVGP157R2NS

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SVGP157R2NS

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Detailed specifications: SVGP104R5NS, SVGP104R5NSTR, SVGP104R5NT, SVGP107R0NL5, SVGP15110NL5, SVGP15140NL5A, SVGP15161PL3A, SVGP15751PL3, IRF9540N, SVGP157R5NP7, SVGP157R5NT, SVGP159R3NL5ATR, SVGP159R3NL5TR, SVGP20110NP7, SVGP20110NS, SVGP20110NSTR, SVGP20110NT

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs