SVGP20110NS Datasheet and Replacement
Type Designator: SVGP20110NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO263
SVGP20110NS substitution
SVGP20110NS Datasheet (PDF)
svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf
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Datasheet: SVGP15161PL3A , SVGP15751PL3 , SVGP157R2NS , SVGP157R5NP7 , SVGP157R5NT , SVGP159R3NL5ATR , SVGP159R3NL5TR , SVGP20110NP7 , 2SK3568 , SVGP20110NSTR , SVGP20110NT , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS , SVGQ06100ND .
History: F5020-S | SPU07N60C3
Keywords - SVGP20110NS MOSFET datasheet
SVGP20110NS cross reference
SVGP20110NS equivalent finder
SVGP20110NS lookup
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History: F5020-S | SPU07N60C3
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