SVGP20110NSTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGP20110NSTR
Marking Code: P20110NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 64 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO263
SVGP20110NSTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGP20110NSTR Datasheet (PDF)
..1. Size:504K silan
svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf
svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf
SVGP20110NT(S)(P7) 88A200V N 2SVGP20110NT(S)(P7) N MOS LVMOS 1
8.1. Size:410K silan
svgp20500nl5.pdf
svgp20500nl5.pdf
SVGP20500NL5 24A200V N SD18SVGP20500NL5 N MOS S D2 7 LVMOS DS 3 6
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .