SVGP20110NSTR Datasheet. Specs and Replacement

Type Designator: SVGP20110NSTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO263

SVGP20110NSTR substitution

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SVGP20110NSTR datasheet

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SVGP20110NSTR

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SVGP20110NSTR

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Detailed specifications: SVGP15751PL3, SVGP157R2NS, SVGP157R5NP7, SVGP157R5NT, SVGP159R3NL5ATR, SVGP159R3NL5TR, SVGP20110NP7, SVGP20110NS, SPP20N60C3, SVGP20110NT, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, SVGQ06130PD

Keywords - SVGP20110NSTR MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.