SVGQ06100ND Datasheet. Specs and Replacement

Type Designator: SVGQ06100ND  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

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SVGQ06100ND substitution

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SVGQ06100ND datasheet

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 svgq06100nd.pdf pdf_icon

SVGQ06100ND

SVGQ06100ND 60A 60V N 2 SVGQ06100ND N MOS LVMOS 1 ... See More ⇒

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SVGQ06100ND

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 svgq041r3nl5v-2hstr.pdf pdf_icon

SVGQ06100ND

SVGQ041R3NL5V-2HS 190A 40V N S D 1 8 SVGQ041R3NL5V-2HS N MOS S 7 D 2 LVMOS D S 3 6 G 4 5 D 12V... See More ⇒

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SVGQ06100ND

SVGQ042R8NL5V-2HS 112A 40V N S D 1 8 SVGQ042R8NL5V-2HS N MOS S 7 D 2 LVMOS D S 3 6 G 4 5 D 12V... See More ⇒

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Detailed specifications: SVGP20110NS, SVGP20110NSTR, SVGP20110NT, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, IRF1010E, SVGQ06130PD, SVGQ109R5NAD, SVS11N60DD2TR, SVS11N60FD2, SVS11N60FJD2, SVS11N60KD2, SVS11N60SD2, SVS11N60SD2TR

Keywords - SVGQ06100ND MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.