SVGQ06100ND MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGQ06100ND
Marking Code: Q06100ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
SVGQ06100ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGQ06100ND Datasheet (PDF)
9.1. Size:455K silan
svgq041r3nl5v-2hstr.pdf
svgq041r3nl5v-2hstr.pdf
SVGQ041R3NL5V-2HS 190A40V N S D1 8SVGQ041R3NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
9.2. Size:417K silan
svgq042r8nl5v-2hstr.pdf
svgq042r8nl5v-2hstr.pdf
SVGQ042R8NL5V-2HS 112A40V N S D1 8SVGQ042R8NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
9.3. Size:406K silan
svgq041r7nl5v-2hstr.pdf
svgq041r7nl5v-2hstr.pdf
SVGQ041R7NL5V-2HS 160A40V N S D1 8SVGQ041R7NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
9.4. Size:439K silan
svgq047r6nl5v-2hs.pdf
svgq047r6nl5v-2hs.pdf
SVGQ047R6NL5V-2HS 65A40V N S D1 8SVGQ047R6NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
