All MOSFET. SVGQ06100ND Datasheet

 

SVGQ06100ND Datasheet and Replacement


   Type Designator: SVGQ06100ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
 

 SVGQ06100ND substitution

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SVGQ06100ND Datasheet (PDF)

 ..1. Size:419K  silan
 svgq06100nd.pdf pdf_icon

SVGQ06100ND

SVGQ06100ND 60A60V N 2SVGQ06100ND N MOS LVMOS 1

 7.1. Size:420K  silan
 svgq06130pd.pdf pdf_icon

SVGQ06100ND

SVGQ06130PD -80A-60V P 2 SVGQ06130PD P MOS 1 LVMOS 3

 9.1. Size:455K  silan
 svgq041r3nl5v-2hstr.pdf pdf_icon

SVGQ06100ND

SVGQ041R3NL5V-2HS 190A40V N S D1 8SVGQ041R3NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V

 9.2. Size:417K  silan
 svgq042r8nl5v-2hstr.pdf pdf_icon

SVGQ06100ND

SVGQ042R8NL5V-2HS 112A40V N S D1 8SVGQ042R8NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V

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Datasheet: SVGP20110NS , SVGP20110NSTR , SVGP20110NT , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS , IRF530 , SVGQ06130PD , SVGQ109R5NAD , SVS11N60DD2TR , SVS11N60FD2 , SVS11N60FJD2 , SVS11N60KD2 , SVS11N60SD2 , SVS11N60SD2TR .

History: IRF1404ZG | STW20NM50FD

Keywords - SVGQ06100ND MOSFET datasheet

 SVGQ06100ND cross reference
 SVGQ06100ND equivalent finder
 SVGQ06100ND lookup
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