SVGQ06100ND Datasheet and Replacement
Type Designator: SVGQ06100ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
SVGQ06100ND substitution
SVGQ06100ND Datasheet (PDF)
svgq041r3nl5v-2hstr.pdf
SVGQ041R3NL5V-2HS 190A40V N S D1 8SVGQ041R3NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
svgq042r8nl5v-2hstr.pdf
SVGQ042R8NL5V-2HS 112A40V N S D1 8SVGQ042R8NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
Datasheet: SVGP20110NS , SVGP20110NSTR , SVGP20110NT , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS , TK10A60D , SVGQ06130PD , SVGQ109R5NAD , SVS11N60DD2TR , SVS11N60FD2 , SVS11N60FJD2 , SVS11N60KD2 , SVS11N60SD2 , SVS11N60SD2TR .
History: VBL1303 | STB80NF55-06-1 | HRLF33N03K | NCEP035N12D | QS5U36 | HPW750N20SPA | STB80NF55-06T
Keywords - SVGQ06100ND MOSFET datasheet
SVGQ06100ND cross reference
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SVGQ06100ND replacement
History: VBL1303 | STB80NF55-06-1 | HRLF33N03K | NCEP035N12D | QS5U36 | HPW750N20SPA | STB80NF55-06T
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