SVGQ109R5NAD Datasheet. Specs and Replacement
Type Designator: SVGQ109R5NAD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 94 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO252
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SVGQ109R5NAD substitution
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SVGQ109R5NAD datasheet
svgq109r5nad.pdf
SVGQ109R5NAD 94A 100V N 2 SVGQ109R5NAD N MOS LVMOS 1 ... See More ⇒
Detailed specifications: SVGP20110NT, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, SVGQ06130PD, AON6380, SVS11N60DD2TR, SVS11N60FD2, SVS11N60FJD2, SVS11N60KD2, SVS11N60SD2, SVS11N60SD2TR, SVS11N60TD2, SVS11N65DD2TR
Keywords - SVGQ109R5NAD MOSFET specs
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