SVGQ109R5NAD Datasheet and Replacement
Type Designator: SVGQ109R5NAD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 94 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO252
SVGQ109R5NAD substitution
SVGQ109R5NAD Datasheet (PDF)
Datasheet: SVGP20110NT , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS , SVGQ06100ND , SVGQ06130PD , IRLZ44N , SVS11N60DD2TR , SVS11N60FD2 , SVS11N60FJD2 , SVS11N60KD2 , SVS11N60SD2 , SVS11N60SD2TR , SVS11N60TD2 , SVS11N65DD2TR .
History: KNF4660A | HM4611A | IPD230N06NG | CSN06N3P6 | H02N60SF | IPD170N04NG | CED02N6A
Keywords - SVGQ109R5NAD MOSFET datasheet
SVGQ109R5NAD cross reference
SVGQ109R5NAD equivalent finder
SVGQ109R5NAD lookup
SVGQ109R5NAD substitution
SVGQ109R5NAD replacement
History: KNF4660A | HM4611A | IPD230N06NG | CSN06N3P6 | H02N60SF | IPD170N04NG | CED02N6A



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