2SK2788 Specs and Replacement

Type Designator: 2SK2788

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: UPAK

2SK2788 substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK2788 datasheet

 ..1. Size:76K  renesas
 r07ds0511ej 2sk2788.pdf pdf_icon

2SK2788

Preliminary Datasheet 2SK2788 R07DS0511EJ0300 (Previous REJ03G1033-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jul 27, 2011 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK) D 1... See More ⇒

 ..2. Size:78K  renesas
 2sk2788.pdf pdf_icon

2SK2788

2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK R ) D 1 2 1. Gate 3 2. Dra... See More ⇒

 8.1. Size:418K  toshiba
 2sk2782.pdf pdf_icon

2SK2788

2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.039 (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancemen... See More ⇒

 8.2. Size:428K  toshiba
 2sk2789.pdf pdf_icon

2SK2788

2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 66 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement... See More ⇒

SHOW MORE

Detailed specifications: 2SK2734, 2SK2735, 2SK2736, 2SK2737, 2SK2738, 2SK2753-01, 2SK2778, 2SK2779, IRF4905, 2SK2796, 2SK2800, 2SK2802, 2SK2803, 2SK2804, 2SK2805, 2SK2848, 2SK2849-01L

Keywords - 2SK2788 MOSFET specs

 2SK2788 cross reference

 2SK2788 equivalent finder

 2SK2788 pdf lookup

 2SK2788 substitution

 2SK2788 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility