All MOSFET. 2SK2788 Datasheet

 

2SK2788 Datasheet and Replacement


   Type Designator: 2SK2788
   Marking Code: VY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: UPAK
 

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2SK2788 Datasheet (PDF)

 ..1. Size:76K  renesas
 r07ds0511ej 2sk2788.pdf pdf_icon

2SK2788

Preliminary Datasheet 2SK2788 R07DS0511EJ0300(Previous: REJ03G1033-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jul 27, 2011Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK) D1

 ..2. Size:78K  renesas
 2sk2788.pdf pdf_icon

2SK2788

2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. Dra

 8.1. Size:418K  toshiba
 2sk2782.pdf pdf_icon

2SK2788

2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.039 (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancemen

 8.2. Size:428K  toshiba
 2sk2789.pdf pdf_icon

2SK2788

2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 66 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement

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Datasheet: 2SK2734 , 2SK2735 , 2SK2736 , 2SK2737 , 2SK2738 , 2SK2753-01 , 2SK2778 , 2SK2779 , IRF4905 , 2SK2796 , 2SK2800 , 2SK2802 , 2SK2803 , 2SK2804 , 2SK2805 , 2SK2848 , 2SK2849-01L .

History: STW32N55M5

Keywords - 2SK2788 MOSFET datasheet

 2SK2788 cross reference
 2SK2788 equivalent finder
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 2SK2788 substitution
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