2SK2788 - аналоги, даташиты, параметры транзистора

2SK2788 Datasheet (PDF)

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r07ds0511ej 2sk2788.pdf pdf_icon

Preliminary Datasheet 2SK2788 R07DS0511EJ0300(Previous: REJ03G1033-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jul 27, 2011Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK) D1

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2sk2788.pdf pdf_icon

2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. Dra

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2sk2782.pdf pdf_icon

2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.039 (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancemen

8.2. Size:428K toshiba
2sk2789.pdf pdf_icon

2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 66 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement