SVSP60R090LHD4TR MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVSP60R090LHD4TR
   Marking Code: P60R090L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 266 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TOLL-8L

SVSP60R090LHD4TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS