SVSP60R090LHD4TR Specs and Replacement
Type Designator: SVSP60R090LHD4TR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 266 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TOLL-8L
SVSP60R090LHD4TR substitution
- MOSFET ⓘ Cross-Reference Search
SVSP60R090LHD4TR datasheet
svsp65r050p7hd4.pdf
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Detailed specifications: SVSP20N60TD2, SVSP20NF60TD2, SVSP24N60FJDD2, SVSP24N60TD2, SVSP24NF60FJDD2, SVSP35NF65P7D3, SVSP60R033P7HD4, SVSP60R090FJDHD4, 10N60, SVSP60R090P7HD4, SVSP65R041P7HD4, SVSP65R050P7HD4, SVSP65R080P7HD4, SVSP65R110FJDHD4, SVSP65R110LHD4TR, SVSP65R110P7HD4, SVSP65R110SHD4
Keywords - SVSP60R090LHD4TR MOSFET specs
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SVSP60R090LHD4TR substitution
SVSP60R090LHD4TR replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CS12N80F
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