FDP52N20 Datasheet. Specs and Replacement

Type Designator: FDP52N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: TO220

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FDP52N20 datasheet

 ..1. Size:1196K  fairchild semi
 fdp52n20 fdpf52n20t.pdf pdf_icon

FDP52N20

October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049 Features Description RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology h... See More ⇒

Detailed specifications: FDP33N25, FDP3651U, STM4410A, FDP3672, FDP3682, STM301N, FDP42AN15A0, FDP51N25, K4145, STM201N, FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20

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