All MOSFET. FDP52N20 Datasheet

 

FDP52N20 Datasheet and Replacement


   Type Designator: FDP52N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO220
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FDP52N20 Datasheet (PDF)

 ..1. Size:1196K  fairchild semi
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FDP52N20

October 2007UniFETTMFDP52N20 / FDPF52N20TtmN-Channel MOSFET200V, 52A, 0.049Features Description RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 49nC)DMOS technology. Low Crss ( Typ. 66pF)This advance technology h

Datasheet: FDP33N25 , FDP3651U , STM4410A , FDP3672 , FDP3682 , STM301N , FDP42AN15A0 , FDP51N25 , RFP50N06 , STM201N , FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 .

History: TMP15N50 | SM2F04NSU | BRCS200P03DP | STP55NE06FP | SVSP11N70DD2TR | TSM4424CS | SFB052N100C2

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