All MOSFET. FDP52N20 Datasheet

 

FDP52N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP52N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO220

 FDP52N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP52N20 Datasheet (PDF)

 ..1. Size:1196K  fairchild semi
 fdp52n20 fdpf52n20t.pdf

FDP52N20 FDP52N20

October 2007UniFETTMFDP52N20 / FDPF52N20TtmN-Channel MOSFET200V, 52A, 0.049Features Description RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 49nC)DMOS technology. Low Crss ( Typ. 66pF)This advance technology h

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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