SVT032R5ND Datasheet and Replacement
Type Designator: SVT032R5ND
Marking Code: 032R5ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 103 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 756 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO252
- MOSFET Cross-Reference Search
SVT032R5ND Datasheet (PDF)
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CIM3N150 | NTMFS5C404NLT | P0460AD | DMN95H2D2HCTI | SRN1660FD
Keywords - SVT032R5ND MOSFET datasheet
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History: CIM3N150 | NTMFS5C404NLT | P0460AD | DMN95H2D2HCTI | SRN1660FD
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