All MOSFET. SVT034R6NDTR Datasheet

 

SVT034R6NDTR Datasheet and Replacement


   Type Designator: SVT034R6NDTR
   Marking Code: 034R6ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 416 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO252
 

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SVT034R6NDTR Datasheet (PDF)

 ..1. Size:425K  silan
 svt034r6ndtr svt034r6nt.pdf pdf_icon

SVT034R6NDTR

SVT034R6ND(T) 120A30V N 2SVT034R6ND(T) N MOS LVMOS 1

 7.1. Size:390K  silan
 svt034r0nl5.pdf pdf_icon

SVT034R6NDTR

SVT034R0NL5 100A30V N SVT034R0NL5 N MOS S D18LVMOS S D2 7 D

 9.1. Size:436K  silan
 svt037r0nl3.pdf pdf_icon

SVT034R6NDTR

SVT037R0NL3 58A30V N SVT037R0NL3 N MOS S D1 8LVMOS S 7 D2 DS 3 6

 9.2. Size:344K  silan
 svt033r5nt.pdf pdf_icon

SVT034R6NDTR

SVT033R5NT 180A30V N 2SVT033R5NT N MOS LVMOS 1

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Keywords - SVT034R6NDTR MOSFET datasheet

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