SVT034R6NDTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVT034R6NDTR
Marking Code: 034R6ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 42 nS
Drain-Source Capacitance (Cd): 416 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm
Package: TO252
SVT034R6NDTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVT034R6NDTR Datasheet (PDF)
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