SVT078R0NT Datasheet and Replacement
Type Designator: SVT078R0NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 262 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SVT078R0NT Datasheet (PDF)
svt078r0nt svt078r0ns svt078r0nstr.pdf
SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1
svt078r0nd.pdf
RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa
svt077r5nt svt077r5nd svt077r5ns.pdf
SVT077R5NT/D/S 95A68V N 2SVT077R5NT/D/S N MOS 1 LVMOS 3
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 22N10 | IRF9530SPBF | IPS80R2K0P7 | CSFR6N70D | SVT077R5ND
Keywords - SVT078R0NT MOSFET datasheet
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History: 22N10 | IRF9530SPBF | IPS80R2K0P7 | CSFR6N70D | SVT077R5ND
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