SVT078R0NT Datasheet and Replacement
Type Designator: SVT078R0NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 262 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SVT078R0NT substitution
SVT078R0NT Datasheet (PDF)
svt078r0nt svt078r0ns svt078r0nstr.pdf
SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1
svt078r0nd.pdf
RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa
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SVT077R5NT/D/S 95A68V N 2SVT077R5NT/D/S N MOS 1 LVMOS 3
Datasheet: SVT043R0NT , SVT044R5NDTR , SVT044R5NL5TR , SVT068R5NDTR , SVT068R5NL5TR , SVT068R5NSTR , SVT068R5NT , SVT078R0NS , 2N60 , SVT085R5NKL , SVT085R5NL5TR , SVT085R5NS , SVT085R5NT , SVT10111ND , SVT10500PD , SVT1104SA , SVT20240NP7 .
History: PSMG150-01 | FQD12P10 | IRLML6302PBF-1 | 7N80L-TF3-T | PTP20N60A | NCE0157A2 | STD10N60M2
Keywords - SVT078R0NT MOSFET datasheet
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History: PSMG150-01 | FQD12P10 | IRLML6302PBF-1 | 7N80L-TF3-T | PTP20N60A | NCE0157A2 | STD10N60M2
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