SVT078R0NT Specs and Replacement
Type Designator: SVT078R0NT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 262 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SVT078R0NT substitution
- MOSFET ⓘ Cross-Reference Search
SVT078R0NT datasheet
svt078r0nt svt078r0ns svt078r0nstr.pdf
SVT078R0NT/S 88A 68V N 2 SVT078R0NT/S N MOS LVMOS 1 ... See More ⇒
svt078r0nd.pdf
R UMW SVT078R0ND 68V N-Channel Power Mosfet UMW SVT078R0ND General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 68V,ID =88A RDS(ON),6.3m (Typ) @ VGS =10V Low On-Resistance Low gate charge Fast switching Low reverse transfer capa... See More ⇒
Detailed specifications: SVT043R0NT, SVT044R5NDTR, SVT044R5NL5TR, SVT068R5NDTR, SVT068R5NL5TR, SVT068R5NSTR, SVT068R5NT, SVT078R0NS, 20N50, SVT085R5NKL, SVT085R5NL5TR, SVT085R5NS, SVT085R5NT, SVT10111ND, SVT10500PD, SVT1104SA, SVT20240NP7
Keywords - SVT078R0NT MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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