SVTP209R7NP7 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVTP209R7NP7
   Marking Code: P209R7NP7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 469 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 793 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO247

SVTP209R7NP7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search