SVTP209R7NP7 Specs and Replacement
Type Designator: SVTP209R7NP7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 469 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 793 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
Package: TO247
SVTP209R7NP7 substitution
- MOSFET ⓘ Cross-Reference Search
SVTP209R7NP7 datasheet
svtp209r7np7.pdf
SVTP209R7NP7 130A 200V N 2 SVTP209R7NP7 N MOS LVMOS 1 ... See More ⇒
Detailed specifications: SVT20240NP7, SVT20240NS, SVT20240NT, SVT25600NF, SVT25600NT, SVT3025D4, SVT4607SA, SVTP035R5NL3, IRF830, EMB07N03HR, EMF90P02A, FQP12N65C, FQPF12N65C, HY3408AP, HY3408AM, HY3408AB, HY3408APS
Keywords - SVTP209R7NP7 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SM6F27NSFP | STB17N80K5
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