All MOSFET. EMF90P02A Datasheet

 

EMF90P02A Datasheet and Replacement


   Type Designator: EMF90P02A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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EMF90P02A Datasheet (PDF)

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EMF90P02A

EMF90P02APChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS20VRDSON(MAX.)90mID10AGSPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS12VTC=25C

Datasheet: SVT20240NT , SVT25600NF , SVT25600NT , SVT3025D4 , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , EMB07N03HR , AON7403 , FQP12N65C , FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM , HY5012W .

History: HM50N20D | AUIRFR4105ZTR | BUK9222-55A | IRF7306QTR

Keywords - EMF90P02A MOSFET datasheet

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