All MOSFET. HY5012W Datasheet

 

HY5012W Datasheet and Replacement


   Type Designator: HY5012W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 1570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO247
 

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HY5012W Datasheet (PDF)

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HY5012W

HY5012W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 125V/300A2.9RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSDD(RoHS Compliant) GGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N Channel MOSFETOrdering and Marking InformationPackage Code

Datasheet: EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM , AO3407 , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , RU75N08R , WM01P41M , WM01P60M , WM02DH08D .

History: 2SK1939-01 | SI4833DY

Keywords - HY5012W MOSFET datasheet

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