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HY5012A Specs and Replacement

Type Designator: HY5012A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 1570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO3P

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HY5012A datasheet

 ..1. Size:617K  1
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HY5012A

HY5012W/A N-Channel Enhancement Mode MOSFET Features Pin Description 125V/300A 2.9 RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available S S D D (RoHS Compliant) G G TO-247A-3L TO-3P-3L Applications Power Management for Inverter Systems. N Channel MOSFET Ordering and Marking Information Package Code ... See More ⇒

Detailed specifications: FQP12N65C, FQPF12N65C, HY3408AP, HY3408AM, HY3408AB, HY3408APS, HY3408APM, HY5012W, 60N06, PK5E6BA, PTP03N04N, RMN3N5R0DN, RU75N08R, WM01P41M, WM01P60M, WM02DH08D, WM02DH08M3

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