All MOSFET. HY5012A Datasheet

 

HY5012A Datasheet and Replacement


   Type Designator: HY5012A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 1570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO3P
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HY5012A Datasheet (PDF)

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HY5012A

HY5012W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 125V/300A2.9RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSDD(RoHS Compliant) GGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N Channel MOSFETOrdering and Marking InformationPackage Code

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOCR36330 | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL

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