HY5012A MOSFET. Datasheet pdf. Equivalent
Type Designator: HY5012A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 300 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 352 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO3P
HY5012A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY5012A Datasheet (PDF)
..1. Size:617K 1
hy5012w hy5012a.pdf
hy5012w hy5012a.pdf
HY5012W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 125V/300A2.9RDS(ON)= m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSSDD(RoHS Compliant) GGTO-247A-3LTO-3P-3LApplications Power Management for Inverter Systems.N Channel MOSFETOrdering and Marking InformationPackage Code
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
