All MOSFET. PK5E6BA Datasheet

 

PK5E6BA Datasheet and Replacement


   Type Designator: PK5E6BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN5X6P
 

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PK5E6BA Datasheet (PDF)

 ..1. Size:895K  1
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PK5E6BA

PK5E6BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 52A100% UIS Tested100% Rg TestedPDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 25 VTC = 25 C52IDContinuous Drain Current4TC = 100 C3

 ..2. Size:466K  niko-sem
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PK5E6BA

N-Channel Enhancement Mode PK5E6BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 5.25m 64A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , 5N50 , PTP03N04N , RMN3N5R0DN , RU75N08R , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T .

History: 8N60A | SI5459DU | IRH7450 | IRF9Z24NL | IRF631 | MTB09N06J3

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