PK5E6BA MOSFET Datasheet: N-Ch, 30V, 52A. Full specification with pinout and replacement list

PK5E6BA Specs and Replacement

Type Designator: PK5E6BA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 327 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN5X6P

PK5E6BA substitution

- MOSFET ⓘ Cross-Reference Search

PK5E6BA datasheet

..1. Size:895K 1
pk5e6ba.pdf pdf_icon

PK5E6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 30V 52A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 25 V TC = 25 C 52 ID Continuous Drain Current4 TC = 100 C 3... See More ⇒

..2. Size:466K niko-sem
pk5e6ba.pdf pdf_icon

N-Channel Enhancement Mode PK5E6BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 5.25m 64A G Features S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒

Detailed specifications: FQPF12N65C, HY3408AP, HY3408AM, HY3408AB, HY3408APS, HY3408APM, HY5012W, HY5012A, IRFP064N, PTP03N04N, RMN3N5R0DN, RU75N08R, WM01P41M, WM01P60M, WM02DH08D, WM02DH08M3, WM02DH08T