RMN3N5R0DN PDF and Equivalents Search

 

RMN3N5R0DN Specs and Replacement

Type Designator: RMN3N5R0DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PMPAK3X3

RMN3N5R0DN substitution

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RMN3N5R0DN datasheet

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RMN3N5R0DN

RMN3N5R0DN N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 5m RoHS Compliant & Halogen-Free D G D D S D Description RMN3N5R0DN is from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- S resistance and fast switching performance. It provides the designer... See More ⇒

Detailed specifications: HY3408AM, HY3408AB, HY3408APS, HY3408APM, HY5012W, HY5012A, PK5E6BA, PTP03N04N, IRF730, RU75N08R, WM01P41M, WM01P60M, WM02DH08D, WM02DH08M3, WM02DH08T, WM02DH50M3, WM02DN080C

Keywords - RMN3N5R0DN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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