All MOSFET. RMN3N5R0DN Datasheet

 

RMN3N5R0DN Datasheet and Replacement


   Type Designator: RMN3N5R0DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PMPAK3X3
 

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RMN3N5R0DN Datasheet (PDF)

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RMN3N5R0DN

RMN3N5R0DNN-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 5m RoHS Compliant & Halogen-FreeDGDDSDDescriptionRMN3N5R0DN is from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Sresistance and fast switching performance. It provides the designer

Datasheet: HY3408AM , HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , BS170 , RU75N08R , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C .

History: RJK0215DPA

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