WM01P41M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM01P41M
Marking Code: S5
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.4 nC
trⓘ - Rise Time: 32.5 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
WM01P41M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM01P41M Datasheet (PDF)
wm01p41m.pdf
Document:W0803040, Rev: D WM01P41M M P-Channel MOSFET Features V = -12V, I = -4.1A DS DR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: RU4030M3
History: RU4030M3
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918