All MOSFET. WM02DH08D Datasheet

 

WM02DH08D Datasheet and Replacement


   Type Designator: WM02DH08D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.1 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT363
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WM02DH08D Datasheet (PDF)

 ..1. Size:467K  way-on
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WM02DH08D

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR

 6.1. Size:600K  way-on
 wm02dh08t.pdf pdf_icon

WM02DH08D

Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR

 6.2. Size:609K  way-on
 wm02dh08m3.pdf pdf_icon

WM02DH08D

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR

 8.1. Size:905K  way-on
 wm02dh50m3.pdf pdf_icon

WM02DH08D

WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR

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History: 2N4224 | KF5N50IZ | JCS1404C | GSM4936S | KF10N65F | IRF7477PBF | ATM2N65TE

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