WM02DH08M3 Specs and Replacement
Type Designator: WM02DH08M3
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: SOT23-6L
WM02DH08M3 substitution
- MOSFET ⓘ Cross-Reference Search
WM02DH08M3 datasheet
wm02dh08m3.pdf
WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel V = 20V, I = 1.4A DS D R ... See More ⇒
wm02dh08t.pdf
Document W0803114, Rev C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6 V = 20V, I = 0.75A DS D R ... See More ⇒
wm02dh08d.pdf
WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS D R ... See More ⇒
Detailed specifications: HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , RU75N08R , WM01P41M , WM01P60M , WM02DH08D , 20N60 , WM02DH08T , WM02DH50M3 , WM02DN080C , WM02DN085C , WM02DN08D , WM02DN08T , WM02DN095C , WM02DN110C .
History: IRFB4227PBF
Keywords - WM02DH08M3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFB4227PBF
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