All MOSFET. WM02DH08T Datasheet

 

WM02DH08T MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM02DH08T
   Marking Code: 26K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT563

 WM02DH08T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM02DH08T Datasheet (PDF)

 ..1. Size:600K  way-on
 wm02dh08t.pdf

WM02DH08T WM02DH08T

Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR

 6.1. Size:609K  way-on
 wm02dh08m3.pdf

WM02DH08T WM02DH08T

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR

 6.2. Size:467K  way-on
 wm02dh08d.pdf

WM02DH08T WM02DH08T

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR

 8.1. Size:905K  way-on
 wm02dh50m3.pdf

WM02DH08T WM02DH08T

WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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