All MOSFET. WM02DH08T Datasheet

 

WM02DH08T Datasheet and Replacement


   Type Designator: WM02DH08T
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT563
 

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WM02DH08T Datasheet (PDF)

 ..1. Size:600K  way-on
 wm02dh08t.pdf pdf_icon

WM02DH08T

Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR

 6.1. Size:609K  way-on
 wm02dh08m3.pdf pdf_icon

WM02DH08T

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR

 6.2. Size:467K  way-on
 wm02dh08d.pdf pdf_icon

WM02DH08T

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR

 8.1. Size:905K  way-on
 wm02dh50m3.pdf pdf_icon

WM02DH08T

WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR

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Datasheet: PK5E6BA , PTP03N04N , RMN3N5R0DN , RU75N08R , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , IRF540 , WM02DH50M3 , WM02DN080C , WM02DN085C , WM02DN08D , WM02DN08T , WM02DN095C , WM02DN110C , WM02DN48A .

History: HSBA0048

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