All MOSFET. STM121N Datasheet

 

STM121N Datasheet and Replacement


   Type Designator: STM121N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: SOP8
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STM121N Datasheet (PDF)

 ..1. Size:103K  samhop
 stm121n.pdf pdf_icon

STM121N

GrPPrPPSTM121NaS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.155 @ VGS=10VSuface Mount Package.100V 2.8A192 @ VGS=4.5V5 4D2 G 26D2 3S 2D1 7 2 G 1SO-88 1D1 S 11(TA=25C unless other

 9.1. Size:104K  samhop
 stm122n.pdf pdf_icon

STM121N

GrPPrPPSTM122NaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.100 @ VGS=10VSuface Mount Package.100V 3.4A125 @ VGS=4.5VD2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11(TA=25C unless othe

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History: BF961 | HLML6401 | GKI04031 | SE2N60B | TPCS8214 | TMAN23N50 | AP85T03GH-HF

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