WM02N20G Specs and Replacement
Type Designator: WM02N20G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 37 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT323
WM02N20G substitution
- MOSFET ⓘ Cross-Reference Search
WM02N20G datasheet
wm02n20g.pdf
WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS D R ... See More ⇒
wm02n20f.pdf
WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS D G R ... See More ⇒
wm02n28m.pdf
Document W0803348, Rev B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS D R ... See More ⇒
wm02n25m.pdf
WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS D R ... See More ⇒
Detailed specifications: WM02DN70M3, WM02DP06D, WM02N08F, WM02N08FB, WM02N08G, WM02N08H, WM02N08L, WM02N20F, IRFP250N, WM02N25M, WM02N28M, WM02N31M, WM02N45M, WM02N50M, WM02N70ME, WM02N75M2, WM02P06F
Keywords - WM02N20G MOSFET specs
WM02N20G cross reference
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WM02N20G replacement
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