WM02N25M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM02N25M
Marking Code: 2302F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
WM02N25M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM02N25M Datasheet (PDF)
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WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR
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Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR
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WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WFP8N60
History: WFP8N60
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