WM02N25M Datasheet and Replacement
Type Designator: WM02N25M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
WM02N25M substitution
WM02N25M Datasheet (PDF)
wm02n20g.pdf

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR
wm02n28m.pdf

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR
wm02n20f.pdf

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR
Datasheet: WM02DP06D , WM02N08F , WM02N08FB , WM02N08G , WM02N08H , WM02N08L , WM02N20F , WM02N20G , 7N65 , WM02N28M , WM02N31M , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G .
History: IPD800N06NG
Keywords - WM02N25M MOSFET datasheet
WM02N25M cross reference
WM02N25M equivalent finder
WM02N25M lookup
WM02N25M substitution
WM02N25M replacement
History: IPD800N06NG



LIST
Last Update
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
p75nf75 | d880 transistor | 2sc1845 | p60nf06 | 2sa1837 | ksc1845 transistor | irf630 datasheet | mpsa13 equivalent