All MOSFET. WM02N31M Datasheet

 

WM02N31M Datasheet and Replacement


   Type Designator: WM02N31M
   Marking Code: S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.9 nC
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23
 

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WM02N31M Datasheet (PDF)

 ..1. Size:500K  way-on
 wm02n31m.pdf pdf_icon

WM02N31M

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS DR

 9.1. Size:524K  way-on
 wm02n75m2.pdf pdf_icon

WM02N31M

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR

 9.2. Size:387K  way-on
 wm02n08l.pdf pdf_icon

WM02N31M

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.3. Size:439K  way-on
 wm02n08f.pdf pdf_icon

WM02N31M

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

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Datasheet: WM02N08FB , WM02N08G , WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , 2N7000 , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L .

History: SWB088R08E8T | AP3400S

Keywords - WM02N31M MOSFET datasheet

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