WM02N31M Specs and Replacement
Type Designator: WM02N31M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
WM02N31M substitution
- MOSFET ⓘ Cross-Reference Search
WM02N31M datasheet
wm02n31m.pdf
WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS D R ... See More ⇒
wm02n75m2.pdf
WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS D R ... See More ⇒
wm02n08l.pdf
WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒
wm02n08f.pdf
WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS D D R ... See More ⇒
Detailed specifications: WM02N08FB, WM02N08G, WM02N08H, WM02N08L, WM02N20F, WM02N20G, WM02N25M, WM02N28M, AON7408, WM02N45M, WM02N50M, WM02N70ME, WM02N75M2, WM02P06F, WM02P06G, WM02P06H, WM02P06L
Keywords - WM02N31M MOSFET specs
WM02N31M cross reference
WM02N31M equivalent finder
WM02N31M pdf lookup
WM02N31M substitution
WM02N31M replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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