Справочник MOSFET. WM02N31M

 

WM02N31M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WM02N31M
   Маркировка: S2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.9 nC
   trⓘ - Время нарастания: 3.2 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для WM02N31M

 

 

WM02N31M Datasheet (PDF)

 ..1. Size:500K  way-on
 wm02n31m.pdf

WM02N31M WM02N31M

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS DR

 9.1. Size:524K  way-on
 wm02n75m2.pdf

WM02N31M WM02N31M

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR

 9.2. Size:387K  way-on
 wm02n08l.pdf

WM02N31M WM02N31M

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.3. Size:439K  way-on
 wm02n08f.pdf

WM02N31M WM02N31M

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 9.4. Size:360K  way-on
 wm02n70me.pdf

WM02N31M WM02N31M

WM02N70ME N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 7A DS DR

 9.5. Size:928K  way-on
 wm02n20g.pdf

WM02N31M WM02N31M

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR

 9.6. Size:450K  way-on
 wm02n08h.pdf

WM02N31M WM02N31M

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.7. Size:328K  way-on
 wm02n28m.pdf

WM02N31M WM02N31M

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR

 9.8. Size:453K  way-on
 wm02n50m.pdf

WM02N31M WM02N31M

WM02N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 5A DS DR

 9.9. Size:408K  way-on
 wm02n08g.pdf

WM02N31M WM02N31M

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.10. Size:449K  way-on
 wm02n45m.pdf

WM02N31M WM02N31M

WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR

 9.11. Size:350K  way-on
 wm02n08fb.pdf

WM02N31M WM02N31M

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 9.12. Size:440K  way-on
 wm02n20f.pdf

WM02N31M WM02N31M

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR

 9.13. Size:416K  way-on
 wm02n25m.pdf

WM02N31M WM02N31M

WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS DR

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