WM02N45M Datasheet and Replacement
Type Designator: WM02N45M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 73 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
WM02N45M substitution
WM02N45M Datasheet (PDF)
wm02n45m.pdf

WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR
wm02n75m2.pdf

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR
wm02n08l.pdf

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08f.pdf

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
Datasheet: WM02N08G , WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , IRFP260 , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R .
History: SSM6N39TU | STB20NM60
Keywords - WM02N45M MOSFET datasheet
WM02N45M cross reference
WM02N45M equivalent finder
WM02N45M lookup
WM02N45M substitution
WM02N45M replacement
History: SSM6N39TU | STB20NM60



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