WM02P06H Datasheet and Replacement
Type Designator: WM02P06H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT723
WM02P06H substitution
WM02P06H Datasheet (PDF)
wm02p06h.pdf
WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR
wm02p06f.pdf
WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
wm02p06l.pdf
Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR
wm02p06g.pdf
WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR
Datasheet: WM02N28M , WM02N31M , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , AO3401 , WM02P06L , WM02P160R , WM02P18F , WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 .
History: WM02P18F | MSAEZ50N10A | NTHS5445T1 | SST4093
Keywords - WM02P06H MOSFET datasheet
WM02P06H cross reference
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WM02P06H replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WM02P18F | MSAEZ50N10A | NTHS5445T1 | SST4093
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