WM02P18F Datasheet and Replacement
Type Designator: WM02P18F
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: DFN1006-3L
WM02P18F substitution
WM02P18F Datasheet (PDF)
wm02p18f.pdf

WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR
wm02p160r.pdf

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
Datasheet: WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , 2SK3568 , WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 .
History: APT8024B2VFR | SM2691PSC | JCS1N70TC
Keywords - WM02P18F MOSFET datasheet
WM02P18F cross reference
WM02P18F equivalent finder
WM02P18F lookup
WM02P18F substitution
WM02P18F replacement
History: APT8024B2VFR | SM2691PSC | JCS1N70TC



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