All MOSFET. WM02P18F Datasheet

 

WM02P18F Datasheet and Replacement


   Type Designator: WM02P18F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: DFN1006-3L
 

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WM02P18F Datasheet (PDF)

 ..1. Size:438K  way-on
wm02p18f.pdf pdf_icon

WM02P18F

WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR

 8.1. Size:597K  way-on
wm02p160r.pdf pdf_icon

WM02P18F

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR

 9.1. Size:474K  way-on
wm02p23m.pdf pdf_icon

WM02P18F

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR

 9.2. Size:831K  way-on
wm02p40me.pdf pdf_icon

WM02P18F

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR

Datasheet: WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , 2SK3568 , WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 .

History: INK0012AU1 | UPA2731UT1A | VP2206N3 | UPA2728GR | DH012N03 | NVC3S5A51PLZ | IRF6645PBF

Keywords - WM02P18F MOSFET datasheet

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