WM02P30ME Datasheet and Replacement
Type Designator: WM02P30ME
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23
WM02P30ME substitution
WM02P30ME Datasheet (PDF)
wm02p30me.pdf

WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p06f.pdf

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
Datasheet: WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F , WM02P20G , WM02P23M , WM02P26M , TK10A60D , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 , WM02P56M3 , WM02P60M2 , WM03DH34M3 , WM03DH60A .
History: APQ84SN06A | IXFT30N60X
Keywords - WM02P30ME MOSFET datasheet
WM02P30ME cross reference
WM02P30ME equivalent finder
WM02P30ME lookup
WM02P30ME substitution
WM02P30ME replacement
History: APQ84SN06A | IXFT30N60X



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