Справочник MOSFET. WM02P30ME

 

WM02P30ME MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WM02P30ME
   Маркировка: 2301
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7.8 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для WM02P30ME

 

 

WM02P30ME Datasheet (PDF)

 ..1. Size:458K  way-on
 wm02p30me.pdf

WM02P30ME WM02P30ME

WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR

 9.1. Size:474K  way-on
 wm02p23m.pdf

WM02P30ME WM02P30ME

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR

 9.2. Size:831K  way-on
 wm02p40me.pdf

WM02P30ME WM02P30ME

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR

 9.3. Size:364K  way-on
 wm02p06f.pdf

WM02P30ME WM02P30ME

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR

 9.4. Size:2423K  way-on
 wm02p06l.pdf

WM02P30ME WM02P30ME

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR

 9.5. Size:535K  way-on
 wm02p41m.pdf

WM02P30ME WM02P30ME

WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR

 9.6. Size:568K  way-on
 wm02p56m3.pdf

WM02P30ME WM02P30ME

WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

 9.7. Size:536K  way-on
 wm02p56m2.pdf

WM02P30ME WM02P30ME

WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

 9.8. Size:424K  way-on
 wm02p06h.pdf

WM02P30ME WM02P30ME

WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR

 9.9. Size:381K  way-on
 wm02p40m3.pdf

WM02P30ME WM02P30ME

Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR

 9.10. Size:553K  way-on
 wm02p06g.pdf

WM02P30ME WM02P30ME

WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR

 9.11. Size:355K  way-on
 wm02p60m2.pdf

WM02P30ME WM02P30ME

Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR

 9.12. Size:476K  way-on
 wm02p26m.pdf

WM02P30ME WM02P30ME

WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR

 9.13. Size:438K  way-on
 wm02p18f.pdf

WM02P30ME WM02P30ME

WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR

 9.14. Size:597K  way-on
 wm02p160r.pdf

WM02P30ME WM02P30ME

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR

 9.15. Size:480K  way-on
 wm02p20g.pdf

WM02P30ME WM02P30ME

WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR

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