WM02P40ME Datasheet and Replacement
Type Designator: WM02P40ME
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOT23
WM02P40ME substitution
WM02P40ME Datasheet (PDF)
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p40m3.pdf

Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR
wm02p41m.pdf

WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
Datasheet: WM02P06L , WM02P160R , WM02P18F , WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , 4N60 , WM02P41M , WM02P56M2 , WM02P56M3 , WM02P60M2 , WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A .
History: APQ84SN06A | IXFT30N60X
Keywords - WM02P40ME MOSFET datasheet
WM02P40ME cross reference
WM02P40ME equivalent finder
WM02P40ME lookup
WM02P40ME substitution
WM02P40ME replacement
History: APQ84SN06A | IXFT30N60X



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc2078 | ac127 transistor | a42 transistor | bc547c | 2sa726 | 2sd313 | 2sc536 | d718 transistor