WM02P60M2 Datasheet and Replacement
Type Designator: WM02P60M2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 303 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
WM02P60M2 Datasheet (PDF)
wm02p60m2.pdf

Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p06f.pdf

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KP504G | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | NCEAP15T14D | STD4N62K3
Keywords - WM02P60M2 MOSFET datasheet
WM02P60M2 cross reference
WM02P60M2 equivalent finder
WM02P60M2 lookup
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WM02P60M2 replacement
History: KP504G | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | NCEAP15T14D | STD4N62K3



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