WM02P60M2 Datasheet and Replacement
Type Designator: WM02P60M2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 303 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOT23
WM02P60M2 substitution
WM02P60M2 Datasheet (PDF)
wm02p60m2.pdf

Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p06f.pdf

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
Datasheet: WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 , WM02P56M3 , IRLZ44N , WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A , WM03DP50A , WM03N01G , WM03N01H , WM03N01L .
History: WMK08N65C4 | AONP36332 | IRHM7360
Keywords - WM02P60M2 MOSFET datasheet
WM02P60M2 cross reference
WM02P60M2 equivalent finder
WM02P60M2 lookup
WM02P60M2 substitution
WM02P60M2 replacement
History: WMK08N65C4 | AONP36332 | IRHM7360



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