All MOSFET. WM03N01G Datasheet

 

WM03N01G MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM03N01G
   Marking Code: KN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 7.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT323

 WM03N01G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM03N01G Datasheet (PDF)

 ..1. Size:2401K  way-on
 wm03n01g.pdf

WM03N01G WM03N01G

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

 7.1. Size:351K  way-on
 wm03n01l.pdf

WM03N01G WM03N01G

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

 7.2. Size:466K  way-on
 wm03n01h.pdf

WM03N01G WM03N01G

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR

 8.1. Size:466K  way-on
 wm03n06m.pdf

WM03N01G WM03N01G

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

 8.2. Size:810K  way-on
 wm03n09f.pdf

WM03N01G WM03N01G

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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