WM03N01G Datasheet and Replacement
Type Designator: WM03N01G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 7.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT323
WM03N01G substitution
WM03N01G Datasheet (PDF)
wm03n01g.pdf

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
wm03n01l.pdf

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR
wm03n01h.pdf

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR
wm03n06m.pdf

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
Datasheet: WM02P56M2 , WM02P56M3 , WM02P60M2 , WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A , WM03DP50A , IRF1407 , WM03N01H , WM03N01L , WM03N06M , WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M .
Keywords - WM03N01G MOSFET datasheet
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